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| FDMC5614P P-Channel PowerTrench(R) MOSFET January 2007 FDMC5614P P-Channel PowerTrench(R) MOSFET -60V, -13.5A, 100m Features Max rDS(on) = 100m at VGS = -10V, ID = -5.7A Max rDS(on) = 135m at VGS = -4.5V, ID = -4.4A Low gate charge Fast switching speed High performance trench technology for extremely low rDS(on) High power and current handling capability RoHS Compliant tm General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench(R) process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V-20V). Application Power management Load switch Battery protection Bottom Top 5 6 7 8 D 1 D D D D D D 5 6 7 8 4 3 2 1 G S S S 4 3 2 S S S G D Power 33 MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed PD TJ, TSTG Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range TC = 25C TA = 25C (Note 1a) TC = 25C TC = 25C TA = 25C (Note 1a) Ratings -60 20 -13.5 -14 -5.7 -23 42 2.1 -55 to +150 W C A Units V V Thermal Characteristics RJC RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 3.0 60 C/W Package Marking and Ordering Information Device Marking 5614P Device FDMC5614P Package Power 33 Reel Size 7'' Tape Width 8mm Quantity 3000 units (c)2006 Fairchild Semiconductor Corporation FDMC5614P Rev.C 1 www.fairchildsemi.com FDMC5614P P-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = -250A, VGS = 0V ID = -250A, referenced to 25C VDS = -48V, VGS = 0V VGS = 20V, VDS = 0V -60 -54 -1 100 V mV/C A nA On Characteristics VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = -250A ID = -250A, referenced to 25C VGS = -10V, ID = -5.7A VGS = -4.5V, ID = -4.4A VGS = -10V, ID = -5.7A , TJ = 125C VDS = -15V, ID = -5.7A -1 -1.95 4.7 84 108 140 11 100 135 168 S m -3 V mV/C Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = -30V, VGS = 0V, f = 1MHz 795 140 60 1055 185 90 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg(TOT) Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain "Miller" Charge VGS = -10V VDD = -30V ID = -5.7A VDD = -30V, ID = -1A VGS = -10V, RGEN = 6 10 11 32 11 15 1.6 2.7 21 23 65 22 20 2.1 3.5 ns ns ns ns nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = -3.2A IF = -3.2A, di/dt = 100A/s -0.8 -1.2 36 29 V ns nC Notes: 1: RJA is determined with the device mounted on a 1 in2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RJA is determined by the user's board design. (a)RJA = 60C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5'x1.5'x0.062' thick PCB. (b)RJA = 135C/W when mounted on a minimum pad of 2 oz copper. b.135C/W when mounted on a minimum pad of 2 oz copper a. 60C/W when mounted on a 1 in2 pad of 2 oz copper 2: Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. FDMC5614P Rev.C 2 www.fairchildsemi.com FDMC5614P P-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 25 VGS = -10V 2.0 VGS = -3.0V -ID, DRAIN CURRENT (A) 20 15 VGS = -5V 1.8 1.6 1.4 1.2 1.0 0.8 0 VGS = -3.5V PULSE DURATION = 300s DUTY CYCLE = 2.0%MAX VGS = -4.5V VGS = -3.5V VGS = -5V 10 VGS = -3.0V VGS = -4.5V VGS = -10V 5 PULSE DURATION = 300s DUTY CYCLE = 2.0%MAX 0 0 2 3 4 -VDS, DRAIN TO SOURCE VOLTAGE (V) 1 5 5 10 15 -ID, DRAIN CURRENT(A) 20 25 Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 350 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mOHM) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) 150 ID = -5.7A VGS = -10V ID = -5.7A 300 250 200 150 100 TJ = 25oC PULSE DURATION =300s DUTY CYCLE = 2.0%MAX TJ = 125oC 50 2 3 4 5 6 7 8 9 -VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. Normalized On- Resistance vs Junction Temperature 30 25 20 15 10 TJ = 125oC TJ = 25oC TJ =-55oC PULSE DURATION = 300s DUTY CYCLE = 2.0%MAX Figure 4. On-Resistance vs Gate to Source Voltage 30 10 -IS, REVERSE DRAIN CURRENT (A) VGS = 0V -ID, DRAIN CURRENT (A) VDD = -5V 1 0.1 0.01 1E-3 1E-4 0.2 TJ = 125oC TJ = 25oC 5 0 0 1 2 3 4 5 6 -VGS, GATE TO SOURCE VOLTAGE (V) TJ = -55oC 0.4 0.6 0.8 1.0 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDMC5614P Rev.C 3 www.fairchildsemi.com FDMC5614P P-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted -VGS, GATE TO SOURCE VOLTAGE(V) 10 ID = -5.7A 2000 1000 VDD = -20V 8 6 VDD = -30V CAPACITANCE (pF) Ciss 4 VDD = -40V 100 Coss Crss f = 1MHz VGS = 0V 2 0 0 4 8 12 Qg, GATE CHARGE(nC) 16 10 0.1 1 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) 60 Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 60 rDS(on) LIMITED -IAS, AVALANCHE CURRENT(A) -ID, DRAIN CURRENT (A) 8 7 6 5 4 3 2 TJ = 125oC TJ = 25oC 10 100us 1ms 1 10ms 100ms SINGLE PULSE TJ = MAX RATED RJA = 135 C/W TA = 25oC o 0.1 0.01 1s 10s DC 1 0.01 0.1 1 10 tAV, TIME IN AVALANCHE(ms) 100 1E-3 0.1 1 10 100 200 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Unclamped Inductive Switching Capability 1000 P(PK), PEAK TRANSIENT POWER (W) VGS = -10V Figure 10. Forward Bias Safe Operating Area TA = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 150 - T A ----------------------125 100 10 1 0.5 -4 10 SINGLE PULSE o RJA = 135 C/W 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 t, PULSE WIDTH (s) Figure 11. Single Pulse Maximum Power Dissipation FDMC5614P Rev.C 4 www.fairchildsemi.com FDMC5614P P-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 2 1 DUTY CYCLE-DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZJA 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 SINGLE PULSE o RJA = 135 C/W t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA -2 1E-3 0.0005 -4 10 10 -3 10 10 -1 10 0 10 1 10 2 10 3 t, RECTANGULAR PULSE DURATION (s) Figure 12. Transient Thermal Response Curve FDMC5614P Rev.C 5 www.fairchildsemi.com FDMC5614P P-Channel PowerTrench(R) MOSFET FDMC5614P Rev.C 6 www.fairchildsemi.com FDMC5614P P-Channel PowerTrench(R) MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACT(R) FAST(R) FASTrTM FPSTM FRFETTM FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyBoostTM TinyBuckTM TinyPWMTM TinyPowerTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHC(R) UniFETTM VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I22 FDMC5614P Rev. C 7 www.fairchildsemi.com |
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